UGC-NET JUNE 2024 – Question paper

11. Match List-I with List-II

Choose the correct answer from the options given below:

1. A-II, B-III, C-I, D-IV

2. A-IV, B-II, C-III, D-I

3. A-III, B-I, C-II, D-IV

4. A-II, B-I, C-IV, D-III

12. Plasma Oxidation is:

1. High-temperature vacuum process where plasma is produced by High frequency discharge.

2. Low-temperature vacuum process where plasma is produced by Low frequency discharge.

3. High-temperature vacuum process where plasma is produced by Low frequency discharge. 

4. Low-temperature vacuum process where plasma is produced by High frequency discharge

13. In varactor diode the reverse biased depletion capacitance (C_j) can be expressed in terms of reverses bias voltage (V_R) for different types of doping profiles and V_R >> V_bi.

A. C_j ∞ (V_R)^-1/2 for linearly graded junction

B. C_j ∞ (V_R)^-1/2 for abrupt junction

C. C_j ∞ (V_R)^-1/3 for linearly graded junction

D. C_j ∞ (V_R)^-3/2 for abrupt junction

 

Choose the most appropriate answer from the options given below:

1. A and B only

2. B and C only

3. C and D only

4. A and D only

 

14. Which of the following is full duplex mode for serial communication of 8051?

1. Mode 0

2. Mode 1

3. Mode 2

4. Mode 3

15. In semiconductors, Diffusivity (D_n), electron mobility (μ_n) and electric field are inter-related and expressed as:

$\mathbf{A}\mathbf{.}\mathbf{ }{\mathbf{D}}_{\mathbf{n}}\mathbf{ }\mathbf{=}\mathbf{ }\mathbf{\left(}\frac{{\mathbf{k}}_{\mathbf{B}}\mathbf{T}}{\mathbf{q}}\mathbf{\right)}{\mathbf{\mu }}_{\mathbf{n }}\mathbf{}$

$\mathbf{;}\mathbf{T}\mathbf{ }\mathbf{is}\mathbf{ }\mathbf{temperature}\mathbf{,}\mathbf{ }{\mathbf{k}}_{\mathbf{B}}\mathbf{ }\mathbf{Boltzmann}\mathbf{ }\mathbf{constant}\mathbf{,}\mathbf{ }\mathbf{q}\mathbf{ }\mathbf{is}$

$\mathbf{charge}$

$\mathbf{B}\mathbf{.}\mathbf{ }{\mathbf{v}}_{\mathbf{drift}}\mathbf{ }\mathbf{=}\mathbf{ }\frac{{\mathbf{v}}_{\mathbf{s}}}{\mathbf{[}\mathbf{1}\mathbf{ }\mathbf{+}\mathbf{ }{\displaystyle \frac{{\mathbf{E}}_{\mathbf{C}}}{\mathbf{E}}}\mathbf{]}}\mathbf{ \; \; \; \; \; \; \; \; \; }$

$\mathbf{;}{\mathbf{v}}_{\mathbf{s}\mathbf{ }}\mathbf{=}\mathbf{ }\mathbf{saturation}\mathbf{ }\mathbf{velocity}\mathbf{,}\mathbf{ }{\mathbf{v}}_{\mathbf{drift}}\mathbf{ }\mathbf{=}\mathbf{ }\mathbf{drift}\mathbf{ }\mathbf{velocity}\mathbf{ }$

$\mathbf{of}\mathbf{ }$$\mathbf{electron}$

$\mathbf{C}\mathbf{.}\mathbf{ }{\mathbf{D}}_{\mathbf{n}}\mathbf{ }\mathbf{=}\mathbf{ }{\mathbf{v}}_{\mathbf{th}}{\mathbf{l}}^{\mathbf{2 \; \; \; \; \; \; \; \; \; \; \; \; \; \; \; \; \; \; \; \; \; }}$$\mathbf{}$

$\mathbf{;}{\mathbf{v}}_{\mathbf{th}}\mathbf{ }\mathbf{=}\mathbf{ }\mathbf{Thermal}\mathbf{ }\mathbf{velocity}\mathbf{,}\mathbf{ }\mathbf{l}\mathbf{ }\mathbf{=}\mathbf{mean}\mathbf{ }\mathbf{free}\mathbf{ }\mathbf{path}$

$\mathbf{D}\mathbf{.}\mathbf{ }{\mathbf{v}}_{\mathbf{drift}}\mathbf{ }\mathbf{=}\mathbf{ }\frac{{\mathbf{v}}_{\mathbf{s}}}{{\mathbf{[}\mathbf{1}\mathbf{ }\mathbf{+}\mathbf{ }{\mathbf{\left(}\frac{{\mathbf{E}}_{\mathbf{C}}}{\mathbf{E}}\mathbf{\right)}}^{\mathbf{2}}\mathbf{]}}^{\mathbf{1}\mathbf{/}\mathbf{2 }}}\mathbf{ \; \; }\mathbf{}$

$\mathbf{;}{\mathbf{ v}}_{\mathbf{drift}}\mathbf{ }\mathbf{=}\mathbf{ }\mathbf{drift}\mathbf{ }\mathbf{velocity}\mathbf{ }\mathbf{of}\mathbf{ }\mathbf{electron}$

Choose the most appropriate answer from the options given below:

1. A and B only

2. B and C only

3. A and D only

4. C and D only

 

 

16. Arrange the electron resist in descending order based on their sensitivity (C/cm²) @ 20 kV.

A. AZ 2400

B. PBS

C. PMMA

D. EBR-9

Choose the most appropriate answer from the options given below:

1. B,A,C,D

2. A,C,B,D

3. D,A,C,B

4. C,D,A,B

 

 

17. Arrange the following materials according to their temperature coefficients of resistance at room temperature in increasing order.

A. Nickel

B. Manganese

C. Tungsten

D. Gold

Choose the most appropriate answer from the options given below:

1. C,B,D,A

2. B,A,D,C

3. B,D,C,A

4. A,C,D,B

 

 

18. What is the stored charge on a MOS capacitor with an area of 4 μm2, a dielectric of 100 Å thick SiO₂ and an applied voltage of 2.5 V?

1. 3.45 X 10^-14C

2. 2.89 X 10^-12C

3. 4.28 X 10^-10C

4. 5.45 X 10^-11C

 

 

19. Find the Thevenin voltage for the circuit given below:

1. 100 V

2. 200 V

3. 300 V

4. 400 V

 

 

20. Match List-I with List-II

Choose the correct answer from the options given below:

1. A-IV, B-I, C-III, D-II

2. A-II, B-IV, C-I, D-III

3. A-III, B-II, C-IV, D-I

4. A-I, B-III, C-II, D-IV